Simulation of the Electrical and Thermal Properties of Graphene Field Effect Transistor
In this research work, the electrical and thermal properties of Graphene field effect transistor (GFET) has been simulated by varying the width of graphene channel. Here, the electrical characteristics, like electron density, hole density, I-V Characteristics and charge carrier velocity profile in the channel region has been studied for three different values of graphene channel width- 1 nm, 2 nm and 3 nm. To analyze the thermal properties of the GFET device, the temperature profile of the graphene channel has been simulated for 1, 2 and 3 nm channel width. After analyzing the simulation of this characteristics, it is concluded that, both electrical and thermal properties of GFET can be improved by fabricating the channel with larger width in the GFET device.
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